Abstract:
Chalcogenide amorphous materials are known to have different structural and optical
properties depending on the deposition method. Here, we investigate thin amorphous GeTe films
[1] obtained through co-sputtering from two distinct Ge and Te targets and by pulsed laser
deposition (PLD) from a polycrystalline GeTe target.
The formation of a single and homogeneous amorphous GeTe phase by co-deposition is uncertain
since we can have mixtures of monoelemental nanoclusters. In order to refine the homogeneity of
the amorphous phase during co-sputtering, the temperature of the substrate was increased from
room temperature up to 180 °C.