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Interaction of chalcogenide glass/Ag dual films structures with e-beam and evaluation of the occurring effects on the performance of CBRAM devices

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dc.contributor.author MITKOVA, M.
dc.date.accessioned 2019-11-04T07:08:07Z
dc.date.available 2019-11-04T07:08:07Z
dc.date.issued 2019
dc.identifier.citation MITKOVA, M. Interaction of chalcogenide glass/Ag dual films structures with e-beam and evaluation of the occurring effects on the performance of CBRAM devices. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June - 4 July, 2019. Chişinău, 2019, p. 2. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/5966
dc.description Abstract en_US
dc.description.abstract Among the many applications of chalcogenide glasses, their involvement as an active layer in redox-conductive-bridge-memory (CBRAM) devices triggers particular interest because of their potential to replace CMOS-based NAND and flash memory. In these devices the chalcogenide glass film is in contact with a silver film, and it is of a practical interest to understand how different external events, for example irradiation with an beam of electrons can influence this dual layer structure in order to identify how the performance of the CBRAM devices will be affected. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcogenide glasses en_US
dc.subject Ag dual films en_US
dc.subject redox-conductive-bridge-memory (CBRAM) en_US
dc.title Interaction of chalcogenide glass/Ag dual films structures with e-beam and evaluation of the occurring effects on the performance of CBRAM devices en_US
dc.type Article en_US


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