Nano-structure formation in ternary chalcogenide thin films

Abstract

Thin films of As-S-Se-Sn and As-Se-Ge chalcogenide semiconductors of different composition have been used for direct e-beam recording of diffraction grating structures by SEM, EBL, and holography techniques. As a result it was established that in these gratings besides modulation of the amplitude phase characteristics the formation of a nano-relief takes place, which correspond to the amplitude and relief-phase changes.