Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory

SYBINA, YU.; YAKUBOV, A.; LAZARENKO, P.; VOROBYOV, YU.; BABICH, A.,; BORGARDT, N.; KOZYUKHIN, S.; SHERCHENKOV, A.

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Electron microscopy studies of the crystallization of Ge2Sb2Te5 thin films for phase change memory

SYBINA, YU.; YAKUBOV, A.; LAZARENKO, P.; VOROBYOV, YU.; BABICH, A.,; BORGARDT, N.; KOZYUKHIN, S.; SHERCHENKOV, A.

URI: http://repository.utm.md/handle/5014/5915

Date: 2019

Abstract:

The Ge2Sb2Te5 (GST225) thin films are widely used in the nonvolatile phase change memory (PCM) [1]. The crystallization process is the slowest part of a PCM operation, thus limiting the overall performance of the PCM devices [2]. Understanding of the crystallization process is critically important for the optimization of the material and increasing the processing speed of PCM. So, the aim of this work was studying the phase transitions of GST225 thin films by transmission electron microscopy (TEM).