Multiple switching effects in GeSbTe thin-films

Abstract

The switching and memory effects in chalcogenide glassy semiconductors are actively studied both experimentally and theoretically during the last years. Possible mechanisms of these effects are widely discussed. In this paper, we present an experimental study of switching and memory effects by an original method with a current generator. In order to measure the I-V curve, triangular current pulses are applied to the sample and the voltage on the sample is measured.