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Quantum electrical transport properties of topological insulator Bi0.83Sb0.17 nanowires

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dc.contributor.author KONOPKO, Leonid
dc.contributor.author NIKOLAEVA, Albina
dc.contributor.author HUBER, Tito
dc.contributor.author ROGACKI, Krzysztof
dc.date.accessioned 2019-10-31T12:30:43Z
dc.date.available 2019-10-31T12:30:43Z
dc.date.issued 2019
dc.identifier.citation KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito, ROGACKI, Krzysztof. Quantum electrical transport properties of topological insulator Bi0.83Sb0.17 nanowires. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p.63. ISBN 978-9975-108-84-3. en_US
dc.identifier.isbn 978-9975-108-84-3
dc.identifier.uri http://repository.utm.md/handle/5014/5778
dc.description Abstract en_US
dc.description.abstract Recently a new class of insulator, namely, topological insulator (TI) [1], was proposed. A TI is a material with a bulk electronic excitation gap generated by the spin-orbit interaction, which is topologically distinct from an ordinary insulator. The strong topological insulator is predicted to have surface states whose Fermi surface encloses an odd number of Dirac points. This defines a topological metal surface phase, which is predicted to have novel electronic properties. The semiconducting alloy Bi1−xSbx is a strong topological insulator due to the inversion symmetry of bulk crystalline Bi and Sb . The transport properties of TI Bi0.83Sb0.17 nanowires were investigated earlier. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject topological insulator en_US
dc.subject Bi-Sb en_US
dc.subject quantum size effect en_US
dc.subject Shubnikov-de Haas oscillation en_US
dc.title Quantum electrical transport properties of topological insulator Bi0.83Sb0.17 nanowires en_US
dc.type Article en_US


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  • 2019
    Extended Abstracts of the: The 10th IC|ECCO; October 23-26, 2019

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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