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Problems of the development of high frequency amplifiers and one of methods of their solution

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dc.contributor.author MITITEL, V. V.
dc.date.accessioned 2019-10-30T12:01:56Z
dc.date.available 2019-10-30T12:01:56Z
dc.date.issued 2005
dc.identifier.citation MITITEL, V. V. Problems of the development of high frequency amplifiers and one of methods of their solution. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 2, pp. 440-442. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/5686
dc.description.abstract Problems of the development of high frequency amplifiers begin when we attempt to reach frequency 30MHz and above. They exist because of presence of input capacitance in the amplifying element. There is no element with the zero capacitance. When frequency is growing up, reactance is coming down. It decreases input and output signals respectively. Until now as an amplifying element we used a bipolar transistor. When we have started using FET transistor many problems have been solved. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject high frequency amplifiers en_US
dc.subject frequency amplifiers en_US
dc.subject amplifiers en_US
dc.title Problems of the development of high frequency amplifiers and one of methods of their solution en_US
dc.type Article en_US


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