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Nanodimensional AlN layers grown on silicon in the system H2-HCl-Al-NH3

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dc.contributor.author RAEVSCHI, Simion
dc.contributor.author BOTNARIUC, Vasile
dc.contributor.author GORCEAC, Leonid
dc.contributor.author TIRON, Stefan
dc.contributor.author KOMPAN, Mihail
dc.contributor.author ZHILYAEV, Yurii
dc.date.accessioned 2019-10-26T09:22:38Z
dc.date.available 2019-10-26T09:22:38Z
dc.date.issued 2013
dc.identifier.citation RAEVSCHI, Simion, BOTNARIUC, Vasile, GORCEAC, Leonid, TIRON, Stefan, KOMPAN, Mihail, ZHILYAEV, Yurii. Nanodimensional AlN layers grown on silicon in the system H2-HCl-Al-NH3. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 372-375. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/5368
dc.description.abstract There were obtained nanodimensional AlN layers on Si by HVPE (Hydride Vapor Phase Epitaxy) method. SEM (Scanning Electron Microscopy) images of AlN layers, and cross-sections of AlN/Si structures are shown. The structure of surface layers was investigated by AFM (Atomic Force Microscopy) method at the stage of forming continuous layer. AlN grains nucleation on the surface of silicon occurs according to the three- dimensional (Folmer -Weber) mechanism. Granules represent a statistically dispersed ensemble of particles distributed on the substrate surface. Two mechanisms have been identified for estimating grains in the transition from the germination stage to the stage of continuous layer formation. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject aluminum nitride en_US
dc.subject gallium nitride en_US
dc.subject ammonia en_US
dc.subject hydrogen chloride en_US
dc.title Nanodimensional AlN layers grown on silicon in the system H2-HCl-Al-NH3 en_US
dc.type Article en_US


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