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Nanolamellar Structures of Oxide-AIIIBVI:Cd Semiconductors Type for use as Detectors of Radiation in the UV Spectral Region

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dc.contributor.author DMITROGLO, L.
dc.contributor.author UNTILA, D.
dc.contributor.author CHETRUSH, P.
dc.contributor.author EVTODIEV, I.
dc.contributor.author CARAMAN, Iu.
dc.contributor.author LAZAR, G.
dc.contributor.author NEDEFF, V.
dc.date.accessioned 2019-10-24T13:17:23Z
dc.date.available 2019-10-24T13:17:23Z
dc.date.issued 2011
dc.identifier.citation DMITROGLO, L., UNTILA, D., CHETRUSH, P. et al. Nanolamellar Structures of Oxide-AIIIBVI:Cd Semiconductors Type for use as Detectors of Radiation in the UV Spectral Region. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 211-214. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/5236
dc.description.abstract In the paper, optical and photoelectrical properties of GaSe and InSe single crystal films of 10-5÷10-7 m submicron thickness and of semiconductor-native oxide structures obtained by annealing at (450÷700)°C in a normal atmosphere, are studied. The absorption spectrum of InSe lamella as well as of GaSe lamella in the energetic range from the red threshold up to 4,5 eV contains three bands with a rapid increase of the absorption coefficient which varies in the limits of (100÷106) cm-1. At the absorption coefficients of (100÷102)cm-1 the indirect optic transitions are present. At the energies higher than 1,25 eV and 2,01 eV for InSe and GaSe respectively the light absorption are determined by the direct optical transitions in the centre of the Brillouin zone and at the energies higher than 3,0 eV also by the direct optical transitions in the points of the bands high symmetry. The resistive photosensitivity bands cover the spectral range Eg≤ hν ≤ 4,5 eV for lamellar photoresistors in which electric field EC6. The resistive photosensitivity band width could be controlled by the lamella thickness for d ≥1μm. The open circuit voltage spectral distribution is analysed from which results that at the oxidation temperature of 700°C in GaSe layer at the heterojunction interface the defects are formed on which the charge carriers, collected in the junction, are dissipated. The noneequilibrium charge carrier free path is of 0,8 μm. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject oxide films en_US
dc.subject nanolamellar structures en_US
dc.subject single crystal films en_US
dc.subject films en_US
dc.title Nanolamellar Structures of Oxide-AIIIBVI:Cd Semiconductors Type for use as Detectors of Radiation in the UV Spectral Region en_US
dc.type Article en_US


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