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Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors

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dc.contributor.author LEISNER, Malte
dc.contributor.author CARSTENSEN, Jürgen
dc.contributor.author FÖLL, Helmut
dc.date.accessioned 2019-10-22T09:03:30Z
dc.date.available 2019-10-22T09:03:30Z
dc.date.issued 2011
dc.identifier.citation LEISNER, Malte, CARSTENSEN, Jürgen, FÖLL, Helmut. Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 13-15. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/4985
dc.description.abstract The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject crystallographical pores en_US
dc.subject electrochemical etching en_US
dc.subject Monte-Carlo-simulation en_US
dc.subject semiconductors en_US
dc.title Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors en_US
dc.type Article en_US


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