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Characterization of silicon p-i-n photodiode electrophysical parameters

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dc.contributor.author PEREVERTAYLO, Vladymyr
dc.contributor.author POPOV, Vladymyr
dc.contributor.author POKANEVICH, Aleksej
dc.contributor.author KARENGIN, Vitaliy
dc.date.accessioned 2019-10-21T07:22:14Z
dc.date.available 2019-10-21T07:22:14Z
dc.date.issued 2005
dc.identifier.citation PEREVERTAYLO, Vladymyr, POPOV, Vladymyr, POKANEVICH, Aleksej et al. Characterization of silicon p-i-n photodiode electrophysical parameters. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 166-168. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4892
dc.description.abstract Electrophysical parameters of test structures formed in high - resistivity silicon during manufacturing of p-i-n photodiodes have been investigated. Using specially designed metal-insulator-semiconductor (MIS) structures important electrophysical characteristics of Si-SiO2 and Si-SiO2-Si3N4 systems were examined. Surface generation velocity Sg, bulk generation life-time of minority carriers τg and fixed charge in the insulator Qss have been determined. These parameters reflect the quality of insulator-semiconductor interface and near surface semiconductor layer. The effect of insulator type on Sg values have been found. The influence of electric field in the insulator on generation of minority carriers in MIS structures was shown. Designed test structures have proved their high effectiveness for investigation of generation parameters in p-i-n photodiodes. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject p-i-n photodiodes en_US
dc.subject high-resistivity silicon en_US
dc.subject MIS structures en_US
dc.subject silicon en_US
dc.title Characterization of silicon p-i-n photodiode electrophysical parameters en_US
dc.type Article en_US


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