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Electrical properties of CuInSe2 crystals obtained by gas transport method

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dc.contributor.author GASHIN, P.
dc.contributor.author KETRUSH, P.
dc.contributor.author NIKORICH, V.
dc.contributor.author SUMAN, V.
dc.contributor.author TAZLAVAN, V.
dc.date.accessioned 2019-10-18T12:07:15Z
dc.date.available 2019-10-18T12:07:15Z
dc.date.issued 2005
dc.identifier.citation GASHIN, P., KETRUSH, P., NIKORICH, V. et al. Electrical properties of CuInSe2 crystals obtained by gas transport method. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 101-104. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4851
dc.description.abstract The ternary compounds of I-III-VI2 group and their solid solutions recently became one of the most promising materials for the fabrication of high efficiency solar cells. The unique physical properties and relatively low cost of the material allow to use CuIn(Ga)Se2 thin films in the low cost large area photo-converters with the efficiency reaching 17%. The further increase of the photo-converters efficiency is stipulated by the fabrication of the epitaxial CuIn(Ga)Se2 layers with the minimum concentration of the native lattice defects. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject crystals en_US
dc.subject gas transport en_US
dc.title Electrical properties of CuInSe2 crystals obtained by gas transport method en_US
dc.type Article en_US


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