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Autler–townes effect on the excitons and biexcitons in semiconductors

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dc.contributor.author KHADZHI, P. I.
dc.contributor.author NADKIN, L. Yu.
dc.contributor.author TKACHENKO, D. V.
dc.date.accessioned 2019-10-18T11:01:57Z
dc.date.available 2019-10-18T11:01:57Z
dc.date.issued 2005
dc.identifier.uri http://repository.utm.md/handle/5014/4842
dc.description.abstract The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M–band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler–Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse. en_US
dc.language.iso en en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject excitons en_US
dc.subject biexcitons en_US
dc.subject semiconductors en_US
dc.title Autler–townes effect on the excitons and biexcitons in semiconductors en_US
dc.type Article en_US


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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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