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Investigation of electrical and photoelectrical properties of ITO-nSi structures

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dc.contributor.author USATII, Iu.
dc.date.accessioned 2019-10-18T10:48:36Z
dc.date.available 2019-10-18T10:48:36Z
dc.date.issued 2005
dc.identifier.citation USATII, Iu. Investigation of electrical and photoelectrical properties of ITO-nSi structures. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 82-86. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4838
dc.description.abstract ITO-nSi solar cells have been obtained by deposition of ITO layers using spray pyrolisis technique onto the surface of nSi wafers with the area up to 48.6cm2. The study of current-voltage and capacitance-voltage characteristics indicates that they are abrupt SIS heterostructures with a tunnel transparent SiO2 insulator layer at the ITO-nSi interface. Solar cells with active area up to 48,6cm2 have been fabricated. Their quantum efficiency reaches 0,97 at λ=550nm. The viability of the developed technology was demonstrated by the fabrication of a number of PV modules composed from 36 solar cells with the output power of 15W. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject silicon en_US
dc.subject transparent conducting oxides en_US
dc.subject conducting oxides en_US
dc.subject oxides en_US
dc.subject solar cells en_US
dc.title Investigation of electrical and photoelectrical properties of ITO-nSi structures en_US
dc.type Article en_US


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