DSpace Repository

Spin-splitted states and spin hall effect induced by polarization in semiconductors structures

Show simple item record

dc.contributor.author KANTSER, V. G.
dc.contributor.author ARAPAN, S.
dc.contributor.author BYRLIBA, G.
dc.contributor.author CYRLIG, S.
dc.date.accessioned 2019-10-18T09:29:18Z
dc.date.available 2019-10-18T09:29:18Z
dc.date.issued 2005
dc.identifier.citation KANTSER, V. G., ARAPAN, S., BYRLIBA, G. et al. Spin-splitted states and spin hall effect induced by polarization in semiconductors structures. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 14-19. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4824
dc.description.abstract A new terms of SOI induced by interband interaction through the electrical polarization or atomic displacement like optical phonons are proposed and analyzed. These SOI mechanisms have the physical nature in the relativistic quantum mechanics with Lorentz boosts. Some particularities of the electronic states of semiconductor quantum wells (QW) and tunneling characteristics of single barrier heterostrucrure related to new SOI terms are studied. Size quantization states of QW are shown to transform into interface ones under SOI effect. Tunneling characteristics of single barrier heterostrucrure are established to be spin-dependent under SOI induced by the EP. The spin Hall effect (SHE) is analyzed in a two dimensional electron system with the SOI of both intrinsic and EP induced types. New peculiarities of SHE, induced by interband interaction of heavy and light holes through optical like displacements, are studied in p-doped semiconductors in the framework of generalized Luttinger Hamiltonian. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.title Spin-splitted states and spin hall effect induced by polarization in semiconductors structures en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Advanced Search

Browse

My Account