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Tunable laser diodes on the basis of III-V heterostructures

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dc.contributor.author VIERU, Stanislav
dc.contributor.author VIERU, Tatiana
dc.contributor.author DOROGAN, Valerian
dc.date.accessioned 2019-10-17T09:32:57Z
dc.date.available 2019-10-17T09:32:57Z
dc.date.issued 2005
dc.identifier.citation VIERU, Stanislav, VIERU, Tatiana, DOROGAN, Valerian. Tunable laser diodes on the basis of III-V heterostructures. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 226-229. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4777
dc.description.abstract This paper describes the fabrication technique and operating characteristics of tunable sources on the basis of III-V with central emission wavelength 835nm and 980 nm. The laser diodes were realized using gain-guided AlGaAs/GaAs single quantum well and ridge-waveguide InGaAs/AlGaAs/GaAs multiquantum well heterostructures. Two type of design: two-section-single-cavity (TSSC) and cleaved-coupled-cavity (C3) tunable laser diodes were made. The two sections of laser diode were obtained by photolithography and chemical etching frontal Au contact layer, width isolated stripe between sections is 4-5 μm. The coupled cavity was formed by cleaving the laser diode chips in two parts. The cleaved sections held together by the contact metals, were then indium soldered "p-side up" to a copper heat sink for CW operation. The emission spectra of 835 nm and 980 nm C3 laser diodes are presented. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject tunable source en_US
dc.subject laser diodes en_US
dc.subject cleaved-coupled-cavity en_US
dc.subject heterostructures en_US
dc.title Tunable laser diodes on the basis of III-V heterostructures en_US
dc.type Article en_US


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