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Thermower in weacly degenerated systems

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dc.contributor.author BODIUL, Pavel
dc.contributor.author PEEV, Leonid
dc.date.accessioned 2019-10-17T07:41:39Z
dc.date.available 2019-10-17T07:41:39Z
dc.date.issued 2005
dc.identifier.citation BODIUL, Pavel, PEEV, Leonid. Thermower in weacly degenerated systems. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 182-184. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4759
dc.description.abstract Doping of semimetals with impurities of the IV and VI groups considerably influences kinetic properties of these systems and it is one of the methods for investigation of peculiarities of the free carrier band spectrum. Bismuth doping with selenium and tellurium leads to an increase of concentration of free electrons, and accordingly to the Fermi level increase. Smooth shift of the Fermi level gives a possibility to study the band structure, in the given case the conduction band of bismuth. However, small concentration region of solubility of selenium impurities in bismuth did not give a possibility using the traditional method of zone recrystallization to obtain strongly doped alloys of high quality, and thus to investigate a wide energy interval of the conduction band. We have used a new method to obtain strongly doped qualitative single crystals of bismuth, it allows smooth shifting of the Fermi level deep into the conduction band. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thermowers en_US
dc.subject weacly degenerated systems en_US
dc.subject bismuth en_US
dc.subject band spectrums en_US
dc.title Thermower in weacly degenerated systems en_US
dc.type Article en_US


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