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Recombinational radiation in doped crystals of zinc diphosphide

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dc.contributor.author PEEV, L. G.
dc.date.accessioned 2019-10-16T13:18:24Z
dc.date.available 2019-10-16T13:18:24Z
dc.date.issued 2005
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4756
dc.description.abstract In the case of semiconductors with an indirect energy gaps of interdicted zones of the type ZnP2 (D84) optical transition with absorption and emission of phonons are found in the free exiton zone. In the case of alloyed crystals those materials in a small mixture appear impurity states on which the bound exitons are located. With the contribution of bound exitons also happens the indirect transition with absorption and emission of phonons. This type of transition is found and is also examined in others semiconductors, as well as in crystals of GaP. The indirect transitions with absorption and emission of phonons can take place in the same time with the contribution of the same photons, in free exiton zone as well as the bound exciton zone. In this case collision and even the interference of absorption combined with the processes mentioned above take place. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject doped crystals en_US
dc.subject zinc diphosphide en_US
dc.subject alloyed crystals en_US
dc.subject phonons en_US
dc.title Recombinational radiation in doped crystals of zinc diphosphide en_US
dc.type Article en_US


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