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Luminescence of ZnSe crystals grown with different vapor transport agents

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dc.contributor.author ENACHE, M.
dc.contributor.author URSAKI, V. V.
dc.contributor.author RUSU, E. V.
dc.contributor.author TAZLAVAN, V. E.
dc.contributor.author SONTEA, V. P.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2019-10-16T11:22:21Z
dc.date.available 2019-10-16T11:22:21Z
dc.date.issued 2005
dc.identifier.citation ENACHE, M., URSAKI, V. V., RUSU, E. V. et al. Luminescence of ZnSe crystals grown with different vapor transport agents. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 105-108. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4740
dc.description.abstract In this paper we compare the luminescence properties of bulk ZnSe crystals grown by vapor transport method with different transport agents in order to establish the influence of the transport agent on the relation between the excitonic, DAP, and deep center emission. ZnSe single crystals were grown using iodine or NH4Cl transport agents. Photoluminescence (PL) was excited by the 351 nm line of an Ar+ SpectraPhysics laser and analyzed through a double spectrometer. The resolution was better than 0.5 meV. The samples were mounted on the cold station of a LTS-22-C-330 cryogenic system. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject luminescence en_US
dc.subject crystals en_US
dc.subject transport agents en_US
dc.subject photoluminescence en_US
dc.title Luminescence of ZnSe crystals grown with different vapor transport agents en_US
dc.type Article en_US


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