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Development of Conductive Nanotemplates on ZnSe

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dc.contributor.author MONAICO, Eduard
dc.contributor.author TIGINYANU, Ion
dc.contributor.author COLIBABA, Gleb
dc.contributor.author NEDEOGLO, D. D.
dc.contributor.author COJOCARU, Ala
dc.contributor.author FÖLL, Helmut
dc.date.accessioned 2019-10-11T11:55:18Z
dc.date.available 2019-10-11T11:55:18Z
dc.date.issued 2011
dc.identifier.citation MONAICO, Eduard, TIGINYANU, Ion, COLIBABA, Gleb et al. Development of Conductive Nanotemplates on ZnSe. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 39-42. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/4672
dc.description.abstract We demonstrate the possibility to fabricate arrays of pores oriented perpendicular and parallel to the top surface of the ZnSe nanotemplate. The control of material conductivity allows one to produce porous ZnSe samples with the mean pore diameter and characteristic skeleton wall thickness from several hundreds of nanometers to about 15 nm. In addition, electrochemical treatment of ZnSe single crystals using photoresist masks allows one to prepare buried porous structures with pores directed parallel to the top template surface, which is especially important for photonic applications. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject electrochemical etching en_US
dc.subject porous ZnSe en_US
dc.subject in-plane approaches en_US
dc.subject wide-band-gap semiconductor nanotemplates en_US
dc.subject semiconductor nanotemplates en_US
dc.title Development of Conductive Nanotemplates on ZnSe en_US
dc.type Article en_US


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