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Preparation of cuprous oxide thin films by chemical deposition and rapid photothermal processing

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dc.contributor.author LUPAN, O.
dc.date.accessioned 2019-07-26T12:07:25Z
dc.date.available 2019-07-26T12:07:25Z
dc.date.issued 2004
dc.identifier.citation LUPAN, O. Preparation of cuprous oxide thin films by chemical deposition and rapid photothermal processing. In: Meridian Ingineresc. 2004, nr. 1, pp. 71-78. ISSN 1683-853X. en_US
dc.identifier.issn 1683-853X
dc.identifier.uri http://repository.utm.md/handle/5014/3817
dc.description.abstract The present work report the formation of homogeneous conductive cuprous oxide thin films by chemical solution deposition technique and rapid photothermal processing. Were investigated various aspects of thin films deposition, morphology, composition, atomic ratio, sensitivity. The films were calcined at 300C, 350C, 400C for 7 sec. Is demonstrated that rapid photothermal processing is more efficient than conventional heat treatment. en_US
dc.description.abstract În lucrarea dată sunt expuse tehnologia de obţinere a peliculelor subţiri de oxid de cupru prin metoda depunerii chimice şi procesare fototermică rapidă. Au fost cercetate aspectele depunerii, morfologia, compoziţia, rata atomică, sensibilitatea. Peliculele obţinute au fost procesate la 300C, 350C, 400C timp de 7 sec. Se demonstrează că procesarea fototermică rapidă este mult mai eficientă decât tratamentul termic. ro
dc.description.abstract Le présent article rapporte la formation des conducteur homogène minces couches d’oxyde cuivreux par technique chimique de dépôt de solution et rapide photothermique recuit. Un procède qui améliore l’efficacité de la méthode CBD pendant la croissance des films de Cu2O est présente. Les films comme-déposés ont été calcines a 3000С, 3500С, 4000С pour 7 secs. Le recuit rapide de photothermique de la couche mince d’oxyde cuivreux déterminent en quelques secondes les effets qui entreprenant pendant de traitement thermique. fr
dc.description.abstract В данной работе приведены результаты формирования тонких слоев оксида меди методом химического осаждения и импульсным фототермическим отжигом. Представлен метод улучшения эффективности метода во время роста слоёв Cu2O. Полученные слои были подвергнуты импульсному фототермическому отжигу при температуре 3000С, 3500С, 4000С в течении 7 сек. Быстрый фототермический отжиг слоев Cu2O намного эффективнее традиционного термического отжига. ru
dc.language.iso en en_US
dc.publisher Editura U.T.M. en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject cuprous oxide films en_US
dc.subject photothermal processing en_US
dc.subject pelicule de oxid de cupru en_US
dc.subject tratament fototermic rapid en_US
dc.title Preparation of cuprous oxide thin films by chemical deposition and rapid photothermal processing en_US
dc.title.alternative Obţinerea peliculelor de oxid de cupru prim metoda depunerii chimice şi tratament fototermic rapid en_US
dc.title.alternative Préparation des minces couches d’oxyde cuivreux par de chimique déposition et de rapide photothermique traitement en_US
dc.title.alternative Изготовление слоев оксида меди методом химического осаждения и импульсным фототермическим отжигом en_US
dc.type Article en_US


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