dc.contributor.author | НИКОЛАЕВА, А. А. | |
dc.contributor.author | КОНОПКО, Л. А. | |
dc.contributor.author | БОДЮЛ, П. П. | |
dc.contributor.author | ПАРА, Г. И. | |
dc.contributor.author | БОТНАРЬ, О. В. | |
dc.date.accessioned | 2019-07-16T11:58:57Z | |
dc.date.available | 2019-07-16T11:58:57Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | НИКОЛАЕВА, А. А., КОНОПКО, Л. А. БОДЮЛ, П. П. et al. Эффект ШдГ и термоэлектрические свойства нитей Bi, легированных акцепторной примесью Sn. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 277-281. ISBN 978-9975-45-377-6. | en_US |
dc.identifier.isbn | 978-9975-45-377-6 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/3557 | |
dc.description.abstract | The influence of the acceptor impurity Sn on the manifestation of size effects in magnetoresistance, and thermopower of single-crystal Bi wires in a glass cover prepared the liquid phase casting with diameters ranging from 100 nm to 1 micron are presented. From the observed Shubnikov de Haas (SdH) oscillations the position of the Fermi level and carrier concentration was calculated. Power factor (Pf) depending on the dopant Sn, temperature and diameter of the wires was determined experimentally. | en_US |
dc.language.iso | ru | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thermoelectricity | en_US |
dc.subject | Bi threads | en_US |
dc.subject | doping | en_US |
dc.subject | Shubnikov de Haas oscillations | en_US |
dc.subject | termoelectricitate | en_US |
dc.subject | fire Bi | en_US |
dc.subject | dopare | en_US |
dc.subject | oscilații Shubnikov de Haas | en_US |
dc.subject | термоэлектричество | en_US |
dc.subject | нити Bi | en_US |
dc.subject | легирование | en_US |
dc.subject | осцилляции Шубникова де Гааза | en_US |
dc.title | Эффект ШдГ и термоэлектрические свойства нитей Bi, легированных акцепторной примесью Sn | en_US |
dc.type | Article | en_US |
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