Study of the effect of heat treatment on optical and electrical parameters of CuO films

Abstract

The effect of vacuum heat treatment of CuO films obtained using RF magnetron sputtering at a pressure of 10-5 Pa for further use in CuO/ZnO and CuO/TiO2 heterojunctions was studied. A 99.95% pure Cu wafer with a diameter of 50 mm and a thickness of 2 mm was used as a target. The sapphire supports used had a dimension of 20 × 20 mm. The pressure in the chamber was 5.4 x 10–5 Pa, and the target–support distance was 80 mm. The temperature of the holder was kept constant at 500oC, and the O2/Ar ratio in the gas flow was 3 : 5, respectively. Film deposition took place under the following conditions: a pressure of 7.4 × 10–3 Pa, a magnetron power of 80 W, and a condensation rate of 5 nm/min.