Generalized hyperbolic model for I-V characteristic of semiconductor devices

PENIN, Alexandr; SIDORENKO, Anatoli

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dc.contributor.author	PENIN, Alexandr
dc.contributor.author	SIDORENKO, Anatoli
dc.date.accessioned	2024-01-05T09:38:02Z
dc.date.available	2024-01-05T09:38:02Z
dc.date.issued	2009
dc.identifier.citation	PENIN, Alexandr, SIDORENKO, Anatoli. Generalized hyperbolic model for I-V characteristic of semiconductor devices. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 69-72. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1).	en_US
dc.identifier.isbn	978-9975-45-045-4
dc.identifier.isbn	978-9975-45-122-2
dc.identifier.uri	http://repository.utm.md/handle/5014/25722
dc.description.abstract	It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.relation.ispartof	Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	transistors	en_US
dc.subject	photovoltaic cells	en_US
dc.subject	semiconductor devices	en_US
dc.title	Generalized hyperbolic model for I-V characteristic of semiconductor devices	en_US
dc.type	Article	en_US