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Electrical properties of As2 S3 Ge8 - Te thin films grown from the vapor phase

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dc.contributor.author CIOBANU, Marina
dc.contributor.author TSIULYANU, Dumitru
dc.date.accessioned 2023-11-29T10:21:37Z
dc.date.available 2023-11-29T10:21:37Z
dc.date.issued 2020
dc.identifier.citation CIOBANU, Marina, TSIULYANU, Dumitru. Effect of nanostructuring to response kinetics of tellurium thin films by nitrogen dioxide sensing. In: Electronic Processes in Organic and Inorganic Materials: proc. of ICEPOM-12, 1 – 5 June, 2020, Kamianets-Podіlskyi, Ukraine: Conference abstracts, 2020, p. 58. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/25067
dc.description.abstract This paper is devoted to study the electrical properties of a complex ChGS from the quaternary system As2S3Ge8-Te. Thin films of As2S3Ge8Te8, As2S3Ge8Te13, as well as the functional structures supplied with symmetrical electrodes of different metals, such as In, Au and Pt have been prepared and studied. Thin films were grown from priory synthetized materials, via thermal evaporation in vacuum of 10-4 Pa onto Pyrex or sintered Al2O3 substrates. The metallic electrodes have been deposited using the same method and similar technological conditions. en_US
dc.language.iso en en_US
dc.publisher Taylor & Francis, Inc. Molecular Crystals and Liquid Crystals en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcogenide glassy semiconductors en_US
dc.subject thin films en_US
dc.subject vapor phase en_US
dc.title Electrical properties of As2 S3 Ge8 - Te thin films grown from the vapor phase en_US
dc.type Article en_US


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