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ZrO2 radiation sensor

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dc.contributor.author SHISHIYANU, Sergiu T.
dc.contributor.author GUEORGUIEV, Valentin K.
dc.contributor.author Teodor S. SHISHIYANU, Teodor S.
dc.date.accessioned 2023-11-22T07:19:47Z
dc.date.available 2023-11-22T07:19:47Z
dc.date.issued 2012
dc.identifier.citation SHISHIYANU, Sergiu T., GUEORGUIEV, Valentin K., SHISHIYANU, Teodor S. ZrO2 radiation sensor. In: Сенсорна електроника та микросiстемнi технологii: тезi доповидей СЕМСТ-5-та Мiждународна наукова технична конференцiя, 4-8 червня, 2012, Одесса, Украина, 2012 p. 120. ISBN 978–966–190–577–0. en_US
dc.identifier.isbn 978–966–190–577–0
dc.identifier.uri http://repository.utm.md/handle/5014/24966
dc.description Only Abstract en_US
dc.description.abstract The effects of γ– irradiation on the physical and electrical properties of ZrO2 high-k MOS radiation sensors were studied. The doses of γ–irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ– irradiation showed high sensitivity. Raman scattering spectra measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ – irradiation doses on the ZrO2 thin films on Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation. en_US
dc.language.iso en en_US
dc.publisher Одеський нацiональный университет iменi I. I. Мечникова en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject radiation sensors en_US
dc.subject Raman scattering spectra en_US
dc.subject zirconium dioxide thin films en_US
dc.title ZrO2 radiation sensor en_US
dc.type Article en_US


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