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Sensitivity of nanostructured tellurium films to low - reactive gases

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dc.contributor.author MOCREAC, O.
dc.contributor.author TSIULYANU, D.
dc.contributor.author AFANASIEV, A.
dc.date.accessioned 2023-11-21T09:11:01Z
dc.date.available 2023-11-21T09:11:01Z
dc.date.issued 2019
dc.identifier.citation MOCREAC, O., TSIULYANU, D., AFANASIEV, A. Sensitivity of nanostructured tellurium films to low - reactive gases. In: Nanoscience and Nanotechnology in Security and Protection Against CBRN Threats, 20 Sept., 2019, Sozopol, Bulgaria: Book of Abstracts, 2019 p. 29. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/24939
dc.description.abstract Electrical conductivity and impedance spectra of nanostructured tellurium thin films have been investigated in different gaseous media. The films were fabricated by thermal vacuum deposition of pure tellurium (purity 99.999 %) onto Pyrex glass or oxidized silicon substrates. It is shown that the grain dimensionality and properties of the grown Te films are determined either by the growth rate or post-deposition treatment. As shown by SEM, AFM and XRD, the rate of deposition most strongly influences the microstructure of the films and their gas sensing properties. en_US
dc.language.iso en en_US
dc.publisher NATO Advanced Study Institute en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanostructured tellurium films en_US
dc.subject gaseous media en_US
dc.title Sensitivity of nanostructured tellurium films to low - reactive gases en_US
dc.type Article en_US


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