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Chalcogenide based sensitive layers for work function gas and humidity sensors

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dc.contributor.author TSIULYANU, D.
dc.contributor.author MARIAN, S.
dc.contributor.author MOCREAC, O.
dc.date.accessioned 2023-11-21T08:49:55Z
dc.date.available 2023-11-21T08:49:55Z
dc.date.issued 2012
dc.identifier.citation TSIULYANU, D., MARIAN, S., MOCREAC, O. Chalcogenide based sensitive layers for work function gas and humidity sensors. In: Сенсорна електроника та микросiстемнi технологii: тезi доповидей СЕМСТ-5-та Мiждународна наукова технична конференцiя, 4-8 червня, 2012, Одесса, Украина, 2012 p. 77. ISBN 978–966–190–577–0. en_US
dc.identifier.isbn 978–966–190–577–0
dc.identifier.uri http://repository.utm.md/handle/5014/24937
dc.description.abstract In this work the authors report about characterization of chalcogenide based thin films, as a materials for gas – sensing applications. The sensing behavior of the As-S-Te-Ge films was tested with environmental pollutant gases such as NO2, CO, O3 and atmospheric humidity using the Kelvin probe technique at room temperature. A significant sensitivity has been observed for nitrogen dioxide. The detection range for NO2 was between 0.85 – 1.9 ppm in ambient air. The response and the recovery time are rapid with good reproducibility and high sensibility. The work function measurements showed, that chalcogenide semiconductors in question are well suited materials for the detection of not only small concentrations of NO2, but also for humidity sensing. en_US
dc.language.iso en en_US
dc.publisher Одеський нацiональный университет iменi I. I. Мечникова en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcogenide based thin films en_US
dc.subject humidity sensors en_US
dc.title Chalcogenide based sensitive layers for work function gas and humidity sensors en_US
dc.type Article en_US


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