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Procedeu de obţinere a nanofirelor de arseniură de galiu

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dc.contributor Universitatea Tehnică a Moldovei
dc.contributor.author MONAICO, Eduard
dc.contributor.author MONAICO, Elena
dc.contributor.author URSACHI, Veaceslav
dc.contributor.author TIGHINEANU, Ion
dc.date.accessioned 2023-09-27T11:28:36Z
dc.date.available 2023-09-27T11:28:36Z
dc.date.issued 2023-01-31
dc.identifier.citation MONAICO, Eduard, MONAICO, Elena, URSACHI, Veaceslav et al. Procedeu de obţinere a nanofirelor de arseniură de galiu. Brevet MD 4840, CIB B82B 3/00, B82Y 40/00, H01L 21/3063. Universitatea Tehnică a Moldovei. Nr. depozit: a 2020 0053. Data depozit: 2020.06.09. Data public.: 2023.01.31. In: BOPI. 2023, nr. 1. en_US
dc.identifier.other Nr. depozit: a 2020 0053
dc.identifier.uri http://www.db.agepi.md/Inventions/details/a%202020%200053
dc.identifier.uri http://repository.utm.md/handle/5014/24299
dc.description.abstract Invenţia se referă la tehnologia de producere a materialelor nanostructurate, în particular la procedee de obţinere a nanostructurilor prin tratare electrochimică. Procedeul, conform invenţiei, include executarea unui contact electric din pastă de argint pe o plachetă de n-GaAs cu orientarea cristalografică (111)B, instalarea plachetei pe un O-inel într-o celulă de Teflon şi anodizarea acesteia întrun electrolit ce conține soluție de 1M HNO3, la temperatura camerei timp de 20 min, în regim potenţiostatic cu aplicarea tensiunii de 3,0 - 4,5 V. en_US
dc.description.abstract Изобретение относится к технологии производства наноструктурированных материалов, в частности к способам получения наноструктур путем электрохимической обработки. Способ, согласно изобретению, включает выполнение электрического контакта из пасты серебра на пластине n-GaAs с кристаллографической ориентацией (111)B, установка пластины на уплотнительное кольцо в тефлоновой ячейке и ее анодирование в электролите, который содержит раствор 1M HNO3 при комнатной температуре в течение 20 минут, в потенциостатическом режиме с подачей напряжения 3,0 - 4,5 В. en_US
dc.description.abstract The invention relates to the nanostructured materials production technology, in particular to methods for producing nanostructures by electrochemical machining. The method, according to the invention, comprises making an electrical contact of a silver paste on an n-GaAs wafer with (111)B crystallographic orientation, installing the wafer on an O-ring in a Teflon cell and anodizing it in an electrolyte which contains a 1M HNO3 solution at room temperature for 20 minutes, in potentiostatic mode with a voltage supply of 3.0 - 4.5 V. en_US
dc.language.iso ro en_US
dc.publisher Agenţia de Stat pentru Proprietatea Intelectuală en_US
dc.rights Brevet valabil. Data expirării brevetului 09.06.2040. en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject invenţii en_US
dc.subject brevete de invenţie en_US
dc.subject materiale nanostructurate en_US
dc.subject nanostructuri en_US
dc.subject nanofire de arseniură de galiu en_US
dc.subject наноструктурированные материалы en_US
dc.subject наноструктуры en_US
dc.subject nanostructures en_US
dc.subject electrochemical machining en_US
dc.subject.classification IPC: B82B 3/00 (2011.01) en_US
dc.subject.classification IPC: B82Y 40/00 (2011.01) en_US
dc.subject.classification IPC: H01L 21/3063 (2011.01) en_US
dc.title Procedeu de obţinere a nanofirelor de arseniură de galiu en_US
dc.type Patent en_US


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Brevet valabil. Data expirării brevetului 09.06.2040. Except where otherwise noted, this item's license is described as Brevet valabil. Data expirării brevetului 09.06.2040.

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