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The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films

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dc.contributor.author MORARI, Vadim
dc.contributor.author KUTUZAU, Maksim
dc.date.accessioned 2022-08-09T07:55:07Z
dc.date.available 2022-08-09T07:55:07Z
dc.date.issued 2022
dc.identifier.citation MORARI, Vadim, KUTUZAU, Maksim. The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films. In: Conferinţa tehnico-ştiinţifică a studenţilor, masteranzilor şi doctoranzilor = Technical Scientific Conference of Undergraduate, Master and PhD Students, Universitatea Tehnică a Moldovei, 29-31 martie 2022. Chișinău, 2022, vol. 1, pp. 230-234. ISBN 978-9975-45-828-3. ISBN 978-9975-45-829-0 (Vol.1). en_US
dc.identifier.isbn 978-9975-45-828-3
dc.identifier.isbn 978-9975-45-829-0
dc.identifier.uri http://repository.utm.md/handle/5014/20655
dc.description.abstract This paper reports on preparation of ITO thin films with different concentrations of Ga by spay pyrolysis method on Si (100) substrates. The morphology of the prepared films was studied using scanning electron microscope (SEM), and the quantitative chemical composition was determined using energy dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) measurements were carried out on Bruker D8 Advance X-Ray Diffractometer with CoKα radiation (λ=0.1789 nm) in the 2Θ region of 20° - 90°. The optical properties of ITO:Ga thin films were measured using a Jasco V-670 spectrometer at room temperature (300 K). en_US
dc.language.iso en en_US
dc.publisher Universitatea Tehnică a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject indium tin oxide en_US
dc.subject thin films en_US
dc.title The influence of gallium (Ga) content on morphological, structural and optical properties of indium tin oxide thin films en_US
dc.type Article en_US


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