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Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another

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dc.contributor.author MONAICO, E. I.
dc.contributor.author MONAICO, E. V.
dc.contributor.author URSAKI, V. V.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2022-04-05T10:53:25Z
dc.date.available 2022-04-05T10:53:25Z
dc.date.issued 2021
dc.identifier.citation MONAICO, E. I., MONAICO, E. V., URSAKI, V. V. Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another. In: Surface Engineering and Applied Electrochemistry, 2021, vol. 57, nr. 2, pp. 165-172. ISSN 1934-8002. en_US
dc.identifier.issn 1934-8002
dc.identifier.uri https://doi.org/10.3103/S106837552102006X
dc.identifier.uri http://repository.utm.md/handle/5014/20021
dc.description Access full text - https://doi.org/10.3103/S106837552102006X en_US
dc.description.abstract The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage from a high voltage to lower one and vice-versa. Switching of the applied voltage in the process of anodization was found to cause the formation of layered porous structures with different degrees of porosity. Crystallographically oriented pores shaped as triangular prisms were produced in a stationary regime of anodization, while a more complex morphology of pores was observed at the interface between the two layers with different degrees of porosity, including pores composed of three circular ones. Based on the results of the morphology study using scanning electron microscopy, a possible mechanism of the formation of such kind of pores in the dynamic transitory regime of anodizing is discussed. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject anodic etching en_US
dc.subject pores en_US
dc.subject gallium arsenide en_US
dc.title Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another en_US
dc.type Article en_US


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