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Temperature and magnetic dependence of the resistance and thermopower in the topological insulator Bi1−xSbx nanowires

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dc.contributor.author NIKOLAEVA, Albina
dc.contributor.author KONOPKO, Leonid
dc.contributor.author HUBER, Tito
dc.contributor.author POPOV, Ivan
dc.contributor.author BODIUL, Pavel
dc.contributor.author MOLOSHNIK, Evghenii
dc.date.accessioned 2022-02-23T12:57:25Z
dc.date.available 2022-02-23T12:57:25Z
dc.date.issued 2014
dc.identifier.citation NIKOLAEVA, Albina, KONOPKO, Leonid, HUBER, Tito et al. Temperature and magnetic dependence of the resistance and thermopower in the topological insulator Bi1−xSbx nanowires. In: Physica Status Solidi (a). 2014, V. 211, N. 6, pp. 1325-1328. ISSN 1862-6319. en_US
dc.identifier.issn 1862-6319
dc.identifier.uri https://doi.org/10.1002/pssa.201300189
dc.identifier.uri http://repository.utm.md/handle/5014/19467
dc.description Access full text – https://doi.org/10.1002/pssa.201300189 en_US
dc.description.abstract Such alloys are classified as topological insulators. The individual Bi–17 at Sb wires in a glass capillary with diameters ranging from 100 to 1000 nm were prepared by high-frequency liquid-phase casting in an argon atmosphere. They were cylindrical single crystals with (1011) orientation along the wire axis. For large-diameter wires we observed that the temperature-dependent resistance, R(T), displays the temperature-activated dependence that is expected of semiconductors. We also found that small-diameter wires at low temperatures show a sharp deviation from the behavior of the resistance R(T), characteristic of semiconductors. The contrasting behavior of wires of different diameters can be interpreted in terms of the conductance of the surface states in BiSb where the surface states arise through a spin-orbital Rashba interaction in the surface of BiSb. The thermopower remains negative over the entire temperature range, but it is strongly temperature dependent. The longitudinal magnetoresistance R(H) at low temperature shows quantum Shubnikov–de Haas oscillations only in thin (d < 200 nm) Bi–17 at\%Sb nanowires. Only high-mobility carriers display SdH oscillations. Since we expect the electronic transport in the 200-nm semiconducting Bi1−xSbx nanowires to be dominated by the surface, this indicates that the surface states have sufficiently high mobility to display SdH. en_US
dc.language.iso en en_US
dc.publisher John Wiley & Sons, Inc. en_US
dc.subject nanowires en_US
dc.subject topological insulators en_US
dc.subject glass capillars en_US
dc.subject cylindrical single crystals en_US
dc.subject single crystals en_US
dc.title Temperature and magnetic dependence of the resistance and thermopower in the topological insulator Bi1−xSbx nanowires en_US
dc.type Article en_US


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