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Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires

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dc.contributor.author PARA, Gh. I.
dc.date.accessioned 2022-01-31T17:20:54Z
dc.date.available 2022-01-31T17:20:54Z
dc.date.issued 2010
dc.identifier.citation PARA, Gh. I. Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires. In: Materials Science and Condensed Matter Physics: mater. conf. internaț. ed. 5, 13-17 septembrie 2010, Chișinău, Republica Moldova, 2010, p. 219. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/19036
dc.description.abstract In this paper the temperature dependences of resistance R(T) in bismuth nanowires in the field of the transition semimetal-semiconductor which predicted in paper [1] at diameters of wires d <100 nm in the range of temperatures 4,2 – 300 К were investigated. en_US
dc.language.iso en en_US
dc.publisher Institutul de Fizică Aplicată en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject bismuth nanowires en_US
dc.subject nanowires en_US
dc.subject transitions semimetal-semiconductors en_US
dc.subject semiconductors en_US
dc.title Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires en_US
dc.type Article en_US


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