Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films

MOCREAC, Olga

dc.contributor.author	MOCREAC, Olga
dc.date.accessioned	2021-11-30T13:25:43Z
dc.date.available	2021-11-30T13:25:43Z
dc.date.issued	2019
dc.identifier.citation	MOCREAC, Olga. Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films. In: Zaštita materijala, 2019, vol. 60, nr. 4, pp. 379-384. ISSN 0351-9465, 2466-2585.	en_US
dc.identifier.issn	0351-9465
dc.identifier.issn	2466-2585
dc.identifier.uri	https://doi.org/10.5937/zasmat1904379M
dc.identifier.uri	http://repository.utm.md/handle/5014/18219
dc.description	Access full text - https://doi.org/10.5937/zasmat1904379M	en_US
dc.description.abstract	Tellurium thin films have been prepared using different rates (0.1 ÷ 30 nm/s) by physical deposition in vacuum on glassy, sintered alumina and electrochemically nanostructured Al2O3 substrates. The sensitivity to nitrogen dioxide of fabricated films was tested at room temperature. It is shown that the deposition rate strongly influences the microstructure of the films in question, as well as their gas sensing properties. The increasing of deposition rate results in transformation of microcrystalline structure of the film into an amorphous one. Simultaneously, both the gas - sensitivity and the response time decrease. The results are explained in terms of interaction between gas molecule and lone – pair electrons of tellurium atoms.	en_US
dc.language.iso	en	en_US
dc.publisher	Inženjersko društvo za koroziju, Beograd	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	substrates	en_US
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	tellurium thin films	en_US
dc.subject	depositions	en_US
dc.title	Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films	en_US
dc.type	Article	en_US