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Structural Characterization of Some As-S-Sb-Te Nanostructured Materials

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dc.contributor.author IASENIUC, O.V.
dc.contributor.author IOVU, M.S.
dc.date.accessioned 2021-11-12T08:21:53Z
dc.date.available 2021-11-12T08:21:53Z
dc.date.issued 2021
dc.identifier.citation IASENIUC, O.V., IOVU, M.S. Structural Characterization of Some As-S-Sb-Te Nanostructured Materials. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 65. ISBN 978-9975-72-592-7. en_US
dc.identifier.isbn 978-9975-72-592-7
dc.identifier.uri http://repository.utm.md/handle/5014/17983
dc.description Only Abstract en_US
dc.description.abstract Nanostructured As-S-Sb-Te semiconductors were synthesized and characterized by Xray fluorescence analyzer (XRF), X-ray diffraction, and optical absorption methods. The X-ray diffraction patterns of ivestigated powders show the presence of amorphous and nanocrystalline phases with the structural units As2S3, Sb2S3 and Sb2Те3. The transmission spectra in the region of wavenumbers ν=10006000 cm-1 show a high transparence just with a single weak absorption band at ν=2340 cm-1 caused of the presence H2S impurity. For the alloys of (As2S3)x(Sb2S3)1-x.system, with increasing of the Sb2S3 trigonal structural units in the above mentioned system, the absorption edge is shifted toward lower photon energy, that corresponds to the optical band band gap about Eg.=2.34 eV for As2S3, 2.1 eV for (As2S3)0.65(Sb2S3)0.35, 1.92 eV for (As2S3)0.35(Sb2S3)0.65 and 1.73 eV for Sb2S3. en_US
dc.language.iso en en_US
dc.publisher Universitatea Tehnică a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject nanostructured materials en_US
dc.subject nanostructured As-S-Sb-Te en_US
dc.title Structural Characterization of Some As-S-Sb-Te Nanostructured Materials en_US
dc.type Article en_US


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