Manufacturing highly conductive ceramic targets and thin films of ZnO

COLIBABA, G.; FEDOROV, V.; RUSNAC, D.; GRABCO, D.; MONAICO, E.; PETRENCO, P.; ROTARU, C.

dc.contributor.author	COLIBABA, G.
dc.contributor.author	FEDOROV, V.
dc.contributor.author	RUSNAC, D.
dc.contributor.author	GRABCO, D.
dc.contributor.author	MONAICO, E.
dc.contributor.author	PETRENCO, P.
dc.contributor.author	ROTARU, C.
dc.date.accessioned	2021-10-28T08:44:31Z
dc.date.available	2021-10-28T08:44:31Z
dc.date.issued	2019
dc.identifier.citation	COLIBABA, G., FEDOROV, V., RUSNAC, D. et al. Manufacturing highly conductive ceramic targets and thin films of ZnO. In: NANO-2019: Limits of Nanoscience and Nanotechnologies. 24-27 septembrie 2019, Chişinău, Republica Moldova and SPINTECH Summer school “S/F Hybrid Structures for Spintronics”, 27-30 September 2019, 2019, p. 78.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/17821
dc.description	Only Abstract	en_US
dc.description.abstract	The present investigation addresses a novel approach for sintering ZnO ceramics by means of chemical vapor transport (CVT) using compound transport agents. The typical size of obtained ZnO ceramics was 25 mm in diameter and 1 mm thickness. The sintering ZnO ceramics at the use of HCl+H2+C, is the most perspective and effective method, which has the following advantages: the low sintering temperature of 1070 °C, 99% of the initial diameter, 80% of single crystal hardness, 90-95% of ZnO density, the low resistivity of 0.025 W×cm, free from powder pressing, free from attachment effect and contamination.	en_US
dc.language.iso	en	en_US
dc.publisher	Academia de Ştiinţe a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chemical vapor transport	en_US
dc.subject	vapor transport	en_US
dc.subject	transport agents	en_US
dc.title	Manufacturing highly conductive ceramic targets and thin films of ZnO	en_US
dc.type	Article	en_US