dc.contributor.author | BOBRYSHEVA, A. I. | |
dc.contributor.author | RUSSU, S. S. | |
dc.contributor.author | ZALOJ, V. A. | |
dc.date.accessioned | 2021-10-25T12:37:49Z | |
dc.date.available | 2021-10-25T12:37:49Z | |
dc.date.issued | 1987 | |
dc.identifier.citation | BOBRYSHEVA, A. I., RUSSU, S. S., ZALOJ, V. A. The Bihole in Quantum Well Structures. In: Physica Status Solidi (b), 1987, V. 143, N. 2, pp. 549-555. ISSN 1521-3951. | en_US |
dc.identifier.uri | https://doi.org/10.1002/pssb.2221430215 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/17801 | |
dc.description | Access full text - https://doi.org/10.1002/pssb.2221430215 | en_US |
dc.description.abstract | In GaAs–Ga1−xAlxAsmany quantum well structures or superlattices the top valence subband VB1 of size quantization is heavy-hole-like HH1 and the effective mass m1 is positive. The second valence subband VB2 has a heavy-hole – HH2 or light-hole –LH1 character in dependence on the barrier and well layer thicknesses and the composition x. The effective mass m2 in VB2 is negative and the condition for bihole formation m1 > || m2| is fulfilled. The binding energy of the bihole is calculated. The bihole formation due to light absorption is studied. The oscillator strengths in the cases of inter- and intrasubband transitions of holes succeeded by bihole formation are obtained. | en_US |
dc.language.iso | en | en_US |
dc.publisher | John Wiley & Sons, Inc. | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | valence subbands | en_US |
dc.subject | quantum wells | en_US |
dc.subject | wells | en_US |
dc.subject | superlattices | en_US |
dc.title | The Bihole in Quantum Well Structures | en_US |
dc.type | Article | en_US |
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