Internal quantum efficiency enhancement of InGaN/GaN LEDs with Mg-Si pin-doped GaN quantum barrier

Abstract

In this work we study numerically the effect of Mg-Si pindoping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the internal quantum efficiency (IQE) of LEDs in comparison with LED devices with undoped, Si(Mg)-doped or Si(Mg) delta-doped GaN barriers.