Effect of Si-doping of the GaN barrier on the internal quantum efficiency of InGaN/GaN light-emitting diodes

Abstract

In the past decade the AlInGaN-based light-emitting diodes (LEDs) have attracted attentions of most researchers as promising candidates to replace conventional lamps in lighting applications including general illuminations, LCD display backlighting, and automobile lighting. However, the efficiency of LEDs is significantly reduced at higher current density, which is known as “efficiency droop” phenomenon. GaN-based materials has a large piezoelectric and spontaneous polarization that lead to reducing radiative recombination probability of LEDs due to the spatial separation of the electron and hole wave functions within InGaN/GaN multiple quantum wells (MQWs). In this paper the heavily Si-doped and Si delta-doped of GaN barrier within InGaN/GaN MQWs are proposed to improve carrier injection, distribution and confinement in the active region.