Photoelectrical properties and the stability at radiation for monocrystals ZNIN2S4

Abstract

This study presents the results of investigations on the conductivity and irradiation stability of single crystals 2 4 ZnIn S14 in a wide range of incident electron energies ( 30÷75 keV) and the respective doses (10 14÷10 20 cm-2). It considers the possibilities to manufacture accelerated electron detectors and assesses their parameters. Considering that the energy values of the order are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.