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Theoretical aspects related to junction temperature at power semiconductors

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dc.contributor.author PLEŞCA, A.
dc.date.accessioned 2019-04-05T11:35:53Z
dc.date.available 2019-04-05T11:35:53Z
dc.date.issued 2008
dc.identifier.citation PLEŞCA, A. Theoretical aspects related to junction temperature at power semiconductors. In: Meridian Ingineresc. 2008, nr. 2, pp. 65-70. ISSN 1683-853X. en_US
dc.identifier.issn 1683-853X
dc.identifier.uri http://repository.utm.md/handle/5014/1683
dc.description.abstract Thermal response of power semiconductor devices for a variety of one-shot and repetitive pulse inputs have been computed with the aim to offer valuable formulae for power circuit designers. It has been computed the temperature variation between junction of power semiconductor device and its case for step, slope, rectangular pulse input power, rectangular pulse series input power, increasing and decreasing triangle pulse series input power, triangle and trapezoidal pulse series input power and in the case of partial sinusoidal pulse series input power. A more exactly thermal calculation of power semiconductors can be done using modelling and simulation software. en_US
dc.description.abstract În prezenta lucrare s-au determinat o serie de relaţii de calcul pentru temperatura joncţiunii în cazul dispozitivelor semiconductoare de putere, având ca punct de plecare impedanţa termică tranzitorie. S-a calculat diferenţa de temperatură dintre joncţiunea semiconductoare şi capsula dispozitivului pentru un impuls de flux termic, o variaţie liniar crescătoare, impuls rectangular, o serie de impulsuri dreptunghiulare, impulsuri de flux termic triunghiular crescătoare, respectiv descrescătoare, serie de impulsuri triunghiulare, trapezoidale şi fragmente de sinusoidă. O analiză termică exactă pentru dispozitivele semiconductoare de putere se poate realiza utilizând programe dedicate de modelare şi simulare termică. ro
dc.description.abstract Dans le présent travail on a déterminé une série de relations de calcul pour la température de la jonction dans le cas des dispositifs semiconducteurs de pouvoir, ayant comme point de départ l’impédance thermique transitoire. On a calculé la différence de température entre la jonction semiconductrice et la capsule du dispositif pour un impulse de flux thermique, une variation linéaire ascendante, un impulse rectangulaire, une série d’impulses rectangulaires. On a calculé également la même différence de température pour des impulses de flux thermique triangulaire ascendants et descendants, une série d’impulses triangulaires, trapézoïdales et des fragments de sinusoïde. fr
dc.language.iso en en_US
dc.publisher Editura U.T.M. en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject power semiconductors en_US
dc.subject semiconductoare de putere en_US
dc.title Theoretical aspects related to junction temperature at power semiconductors en_US
dc.title.alternative Aspecte teoretice privind temperatura joncţiunii la semiconductoarele de putere en_US
dc.title.alternative Aspects théoriques à propos de jonction température à semiconducteurs de pouvoir en_US
dc.title.alternative Теоретические аспекты относительно температуры в силовых p-n переходах полупроводников en_US
dc.type Article en_US


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