Усиление и Лазерная Генерация на М-Полосе Люминесценции

ХАДЖИ, П. И.; МАРКОВ, Д. А.; НАДЬКИН, Л. Ю.

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dc.contributor.author	ХАДЖИ, П. И.
dc.contributor.author	МАРКОВ, Д. А.
dc.contributor.author	НАДЬКИН, Л. Ю.
dc.date.accessioned	2020-11-29T18:58:21Z
dc.date.available	2020-11-29T18:58:21Z
dc.date.issued	2015
dc.identifier.citation	ХАДЖИ, П. И., МАРКОВ, Д. А., НАДЬКИН, Л. Ю. Усиление и Лазерная Генерация на М-Полосе Люминесценции. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 269-271. ISBN 978-9975-45-377-6.	en_US
dc.identifier.isbn	978-9975-45-377-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11851
dc.description.abstract	A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation.	en_US
dc.language.iso	ru	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	M-luminescence band	en_US
dc.subject	excitons	en_US
dc.subject	biexcitons	en_US
dc.title	Усиление и Лазерная Генерация на М-Полосе Люминесценции	en_US
dc.type	Article	en_US