IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • NIKOLAEVA, A.; BODIUL, P.; KONOPKO, L.; PARA, G. (IEEE, 2002)
    In the work thin single crystal (0.3 < d < 5 /spl mu/m) wires Bi/sub 1-x/Sb/sub x/ obtained by the liquid phase casting in a glass coating were investigated under elastic deformations up to 2-3% relative elongation in the ...
  • DRAGOMAN, Mircea; CIOBANU, Vladimir; DRAGOMAN, Daniela; DINESCU, Adrian; BRANISTE, Tudor; TIGINYANU, Ion (Institute of Nanocience and Nanotechnology, INN, 2017)
    We have recently shown that GaN ultrathin membranes suspended on GaN nanowires having a thickness of 15 nm and planar dimensions of 12×184 microns are acting as memristive devices. The physical effect which explains this ...
  • TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (ELSEVIER, 2006)
    The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in ...
  • SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSE, T. (Elsevier, 2007)
    We present X-ray Photoemission (XPS) and low energy electron diffraction (LEED) investigations of initial stages of GaN film growth on sapphire(0001) and SiC(0001)-√3×√3:Ga. The growth of ultrathin films is performed by ...
  • COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...
  • TIGINYANU, Ion (Academica Greifswald, 2017)
    GaN and ZnO are wide band gap semiconductor compounds with unique properties favourable for the development of short-wavelength light emitting devices and high-power electronics. From the point of view of applications, ...
  • POPA, V.; TIGINYANU, I. M.; URSAKI, V. V.; VOLCIUS, O.; MORKOÇ, H. (IOP Publishing, 2006)
    We demonstrate that photoelectrochemical (PEC) etching of GaN layers in KOH or H3PO4 solutions leads to the formation of specific surface morphologies which cause the material to exhibit different sensitivities to certain ...
  • ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Institutul de Fizică Aplicată al AŞM, 2012)
    In this paper, the change of work function ( Δφ ) of the tellurium thin films was studied in response to different concentrations of nitrogen dioxide, carbon oxide, ozone and water vapor using a KP with a gold grid reference ...
  • TSIULYANU, Dumitru (Beilstein Institute for the Advancement of Chemical Sciences (Germany), 2020)
    Nanocrystalline and amorphous nanostructured tellurium (Te) thin films were grown and their gas-sensing properties were investigated at different operating temperatures with respect to scanning electron microscopy and X-ray ...
  • CAPITAN, Olga (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)
    In this paper, there has been determined the regional biogas and syngas potential and the electric power that could be installed. As raw materials, applicable in this field, was considered animal waste, industrial waste, ...
  • GHERMAN, Cristina; ŞVEŢ, Olga; ARSENI, Lucia (Institutul de Energetică al Academiei de Științe a Moldovei, 2012)
    În lucrarea dată a fost determinat costul singazului produs din paie şi chips-uri la diferite capacităţi ale gazificatorului, în condiţiile Republicii Moldova. Pentru acesta, au fost determinate ratele de creştere ale ...
  • BURLACU, Natalia (Bucharest University Press, 2019)
    The present material contains an analytical framework regarding the concept of algorithmic thinking (AT): semantics, the area of use, the training mode, the imperatives of developing and implementing of the cognitive skills ...
  • RARU, Aliona; FLOREA-BURDUJA, Elena; IROVAN, Marcela; FARÎMA, Daniela (Editura Universităţii din Oradea, 2020)
    This paperwork analyses the synthesis of literature regarding functional textiles. The actuality of the theme is determined by the overwhelming specialists' interest upon the solution to the problem of elaboration of new ...
  • JITARI, Liliana (Scientific Research Publishing Inc., 2021)
    This article analyzes the efficiency of the administration, as well as the way of financing the cultural heritage of the Republic of Moldova through the prism of the legal, institutional and cultural policy framework. ...
  • COJUHARI, E. P.; GARDNER, B. J. (Australian Mathematical Publishing Association Inc., 2012)
    A type of generalized higher derivation consisting of a collection of self-mappings of a ring associated with a monoid, and here called a D-structure, is studied. Such structures were previously used to define various kinds ...
  • COJOCARI, Oleg; HARTNAGEL, Hans L. (American Vacuum Society, 2006)
    A modified model of the Schottky interface is proposed, which includes a near-surface layer (NSL) in the depletion region of the semiconductor. An important effect of the NSL is the ability to make the value of the Schottky ...
  • ANDRIESH, A. M.; ENAKI, N. A.; KOROLI, V. I.; CULEAC, I. P.; CIORNEA, V. I. (National Institute of Optoelectronics, Romania, 2000)
    We study the cooperative generation of phonon pulses in semiconductors by groups of inverted equidistant multilevel coupled excitations (electrons, excitons). Such equidistant systems take place in chalcogenide glasses ...

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