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Browsing Articole ştiinţifice by Subject "heterostructures"

Browsing Articole ştiinţifice by Subject "heterostructures"

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  • Cobalt/Cobaltoxide Exchange Bias System for Diluted Ferromagnetic Alloy Films in Superconducting Spin-Valves 
    SIDORENKO, A. S.; LENK, D.; ZDRAVKOV, V. I.; MORARI, R.; ULLRICH, A.; MÜLLER, C.; KRUG VON NIDDA, H.-A.; HORN, S.; TAGIROV, L. R.; TIDECKS, R. (Springer Nature Switzerland, 2016)
    The present work reports on the influence of a Cobalt sublayer on a conventional exchange bias CoOx/Cu41Ni59 interface. For superconducting spintronics the ability to exchange bias diluted ferromagnetic alloys is an essential ...
  • Coordinate sensitive photodetectors based on InGaAs/InP heterostructures 
    BUDEANU, E.; GROZESCU, I.; PURICA, M.; RUSU, E.; SLOBODCHIKOV, S. V. (IEEE, 2000)
    The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed ...
  • Development of 2-in-1 Sensors for the Safety Assessment of Lithium-Ion Batteries via Early Detection of Vapors Produced by Electrolyte Solvents 
    LUPAN, Oleg; MAGARIU, Nicolae; SANTOS-CARBALLAL, David; ABABII, Nicolai; OFFERMANN, Jakob; POOKER, Pia; HANSEN, Sandra; SIEBERT, Leonard; LEEUW, Nora H. de; ADELUNG, Rainer (American Chemical Society, 2023)
    In this study, we investigate the gas-sensing capabilities of semiconducting metal oxides for detecting vapors produced by common battery components, such as solvents, salts, or their degassing products. Our main objective ...
  • Electrical properties of the CdS/InP heterostructures for photovoltaic applications 
    PURICA, M.; BUDIANU, E.; RUSU, E.; ARABADJI, P. (Elservier, 2006)
    The n+-CdS/p-InP heterojunctions have been prepared by chemical vapor deposition in a quasi-closed volume and H2 transport of CdS on InP substrate. The n+-CdS/p-p+-InP heterojunction solar cells obtained using this technique ...
  • Experimental observation of the triplet spin-valve effect in a superconductor-ferromagnet heterostructure 
    ZDRAVKOV, V. I.; KEHRLE, J.; OBERMEIER, G.; LENK, D.; KRUG VON NIDDA, H.-A.; MÜLLER, C.; KUPRIYANOV, M. Yu.; SIDORENKO, A. S.; HORN, S.; TIDECKS, R.; TAGIROV, L. R. (American Physical Society, 2013)
    The theory of superconductor-ferromagnet heterostructures with two ferromagnetic layers predicts the generation of a long-range, odd-in-frequency triplet pairing at noncollinear alignment (NCA) of the magnetizations of the ...
  • Full-switching FSF-type superconducting spin-triplet magnetic random access memory element 
    LENK, D.; MORARI, R.; ZDRAVKOV, V. I.; ULLRICH, A.; KHAYDUKOV, Yu; OBERMEIER, G.; MÜLLER, C.; SIDORENKO, A. S.; NIDDA von, H.-A. Krug; HORN, S.; TAGIROV, L. R.; TIDECKS, R. (American Physical Society, 2017)
    In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field ...
  • H2 gas sensing properties of a ZnO/CuO and ZnO/CuO/Cu2O Heterostructures 
    ABABII, N.; POSTICA, V.; HOPPE, M.; ADELUNG, R.; LUPAN, O.; RAILEAN, S.; PAUPORTÉ, T.; VIANA, B. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2017)
    The most important parameters of gas sensors are sensitivity and especially high selectivity to specific chemical species. To improve these parameters we developed sensor structures based on layered semiconducting oxides, ...
  • Heterostructure-based devices with enhanced humidity stability for H2 gas sensing applications in breath tests and portable batteries 
    LUPAN, Oleg; ABABII, Nicolai; MISHRA, Abhishek Kumar; BODDULURI, Mani Teja; MAGARIU, Nicolae; Alexander VAHL, Alexander VAHL; KRÜGER, Helge; WAGNER, Bernhard; FAUPEL, Franz; ADELUNG, Rainer; LEEUW, Nora H. de; HANSEN, Sandra (Elsevier, 2021)
    Semiconducting metal oxide - based gas sensors exhibit outstanding sensitivity, although humidity in the analyte typically hampers precise measurements. In this work it was shown that a 5−6 nm thin Al2O3 nano-layer is ...
  • Heterostructures on InP substrate for high-speed detection devices over a large spectral range (0.8–1.6 μm) 
    BUDIANU, Elena; PURICA, Munizer; RUSU, Emil (Elservier, 2000)
    Semiconductor heterostructures of AIIIBV type with a bandgap adjustable by composition assure a good detection in a large spectral range of 0.8–1.6 μm, compatible with optical fibre communication spectral range. The paper ...
  • High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure 
    BUDIANU, E.; PURICA, M.; RUSU, E.; NAN, S. (IEEE, 1997)
    The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity ...
  • Neutron reflectometry studies of Gd/Nb and Cu30Ni70/Nb superlattices 
    KHAYDUKOV, Y.; KRAVTSOV, E.; MORARI, R.; LENK, D.; MUSTAFA, L.; KIM, G.; TRAPP, M.; ZHAKETOV, V.; PROGLYADO, V.; ZRDAVKOV, V.; NIKITENKO, Y.; NIDDA Von, H.-A. Krug; KELLER, T.; STEITZ, R.; TIDEKS, R.; SIDORENKO, A.; USTINOV, V.; AKSENOV, V.; KEIMER, B. (IOP Publishing, 2019)
    We performed a comparative study of magnetic proximity effects in [Gd(5nm)/Nb(25nm)]12 and [Cu30Ni70(6nm)/Nb(27nm)]12 superlattices of S/F type by means of transport measurements and neutron scattering. Transport measurements ...
  • New structure of photoreceivers for optic communications 
    DOROGAN, Valerian V.; VIERU, Tatiana S.; DOROGAN, Andrei V. (SPIE, Society of Photo-Optical Instrumentation Engineers, 2005)
    New p-i-n photodiodes on the basis of InP-InGaAs-InGaAsP heterostructures for optic communications, possessing original characteristics, are presented in the paper. Their specific photosensibility was achieved by placing ...
  • Optical and electrical properties of the CdS/InP heterostructures solar cells 
    SLOBODCHIKOV, S. V.; RUSU, E.; ARABADJI, P.; PURICA, M.; BUDIANU, E. (IEEE, 2004)
    Technological procedures of solar cells fabrication based on n/sup +/-CdS/p-p/sup +/-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was /spl ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...
  • Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures 
    SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...
  • Oxide planar p–n heterojunction prepared by low temperature solution growth for UV-photodetector applications 
    LUPAN, O.; KOUSSI-DAOUD, S.; VIANA, B.; PAUPORTÉ, T. (The Royal Society of Chemistry, 2016)
    The paper presents the low temperature growth of a planar p-NiO/n-ZnO/FTO heterostructure for efficient detection of soft UV light. n-ZnO was prepared at 60°C using an aqueous bath of zinc nitrate precursor. The 2D layer ...
  • Photoelectric structures based on nanoporous p-InP 
    DIKUSAR, A. I.; BRUK, L. I.; MONAICO, E. V.; SHERBAN, D. A.; SIMASHKEVICH, A. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2008)
    The possibility of nanostructuring of surfaces of indium phosphide with hole conduction is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with a nanoporous surface at the interface is ...
  • Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP 
    RUSU, E. V.; SLOBODCHIKOV, S. V.; SALIKHOV, H. M.; TURCU, M. (IEEE, 1998)
    The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Proximity effect in [Nb(1.5 nm)/Fe(x)]10/Nb(50 nm) superconductor/ferromagnet heterostructures 
    KHAYDUKOV, Yury; PÜTTER, Sabine; GUASCO, Laura; MORARI, Roman; KIM, Gideok; KELLER, Thomas; SIDORENKO, Anatolie; KEIMER, Bernhard (Beilstein Institut, 2020)
    We have investigated the structural, magnetic and superconduction properties of [Nb(1.5 nm)/Fe(x)]10 superlattices deposited on a thick Nb(50 nm) layer. Our investigation showed that the Nb(50 nm) layer grows epitaxially ...

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