IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole ştiinţifice by Author "VILAPLANA, R."

Browsing Articole ştiinţifice by Author "VILAPLANA, R."

Sort by: Order: Results:

  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
  • VILAPLANA, R.; GOMIS, O.; MANJÓN, F. J.; ORTIZ, H.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2013)
    We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high ...
  • GOMIS, O.; SANTAMARÍA-PÉREZ, D.; VILAPLANA, R.; LUNA, R.; SANS, J. A.; MANJÓN, F. J.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2014)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a ...
  • VILAPLANA, R.; GOMIS, O.; PEREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRIGUEZ-HERNANDEZ, P.; MUŇOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (IOP Publishing, 2013)
    Order–disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown ...
  • GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • VILAPLANA, R.; ROBLEDILLO, M.; GOMIS, O.; SANS, J. A.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...

Search DSpace


Browse

My Account