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Browsing Articole ştiinţifice by Author "URSAKI, Veaceslav V."

Browsing Articole ştiinţifice by Author "URSAKI, Veaceslav V."

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  • Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films 
    MORARI, Vadim; PANTAZI, Aida; CURMEI, Nicolai; POSTOLACHE, Vitalie; RUSU, Emil V.; ENACHESCU, Marius; TIGINYANU, Ion M.; URSAKI, Veaceslav V. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    A series of Zn1−xMgxO thin films with the composition range x = 0.00–0.40 has been prepared by sol–gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400–650 °C. The ...
  • Controlled Electroplating of Noble Metals on III-V Semiconductor Nanotemplates Fabricated by Anodic Etching of Bulk Substrates 
    MONAICO, Elena I.; MONAICO, Eduard V.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (MDPI (Basel, Switzerland), 2022)
    Porous templates are widely used for the preparation of various metallic nanostructures. Semiconductor templates have the advantage of controlled electrical conductivity. Site-selective deposition of noble metal formations, ...
  • Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires 
    MONAICO, Elena I.; MONAICO, Eduard V.; URSAKI, Veaceslav V.; HONNALI, Shashank; POSTOLACHE, Vitalie; LEISTNER, Karin; NIELSCH, Kornelius; TIGINYANU, Ion M. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and ...
  • Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering 
    SUMAN, Victor; MORARI, Vadim; RUSU, Emil V.; GHIMPU, Lidia; URSAKI, Veaceslav V. (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu", 2021)
    In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used ...
  • Free-Standing Large-Area Nanoperforated Gold Membranes Fabricated by Hopping Electrodeposition 
    MONAICO, Eduard V.; MONAICO, Elena I.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (The Electrochemical Society, 2020)
    A room-temperature two-step cost-effective electrochemical technology is proposed for the preparation of free-standing Au nanomembranes. A thin Au film with the thickness less than 100 nm was deposited by pulsed electroplating ...
  • Multilayer porous structures on GaN for the fabrication of Bragg reflectors 
    BRANISTE, Tudor; MONAICO, Eduard; MARTIN, Denis; CARLIN, Jean-François; POPA, Veaceslav; URSAKI, Veaceslav V.; GRANDJEAN, Nicolas; TIGINYANU, Ion M. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2017)
    We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride ...
  • Multilayer porous structures on GaN for the fabrication of Bragg reflectors 
    BRANISTE, Tudor; MONAICO, Eduard; MARTIN, Denis; CARLIN, Jean-François; POPA, Veaceslav; URSAKI, Veaceslav V.; GRANDJEAN, Nicolas; TIGINYANU, Ion M. (SPIE, 2017)
    We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride ...
  • Photoluminescence of Eu-doped ZnO structures 
    URSAKI, Veaceslav V.; RUSU, Emil; ZALAMAI, Victor; SIRBU, Lilian; MONAICO, Eduard; TIGINYANU, Ion M. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2004)
    ZnO-based red phosphors were prepared by different methods. One phosphor was grown from a Na2B4O7 melt, and another one was prepared from a ZnO:Eu2O3 powder via electron beam treatment. The e-beam processing is found to ...
  • Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications 
    MONAICO, Eduard V.; MONAICO, Elena I.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (Wiley-VCH GmbH, Weinheim, 2023)
    Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds ...
  • Structural and Vibrational Properties of CdAl2S4 under High Pressure: Experimental and Theoretical Approach 
    SANS, Juan Ángel; SANTAMARÍA-PÉREZ, David; POPESCU, Catalin; GOMIS, Oscar; MANJÓN, Francisco Javier; VILAPLANA, Rosario; MUÑOZ, Alfonso; RODRÍGUEZ-HERNÁNDEZ, Plácida; URSAKI, Veaceslav V.; TIGINYANU, Ion M (American Chemical Society, 2014)
    The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements ...
  • Ultrafast third-order optical nonlinearity in SnS2 layered compound for photonic applications 
    PETRIS, Adrian; GHEORGHE, Petronela S.; VLAD, Valentin I.; RUSU, Emil; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (ELSEVIER, 2018)
    The ultrafast nonlinear optical response of SnS2 layered compound, excited by high-repetition-rate ultrashort (fs) pulses at 1550 nm wavelength, is investigated for the first time by optical third harmonic generation. In ...

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