Browsing Articole ştiinţifice by Author "RAILEAN, S. K."

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Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing

SHISHIYANU, S. T.; LUPAN, O. I.; SHISHIYANU, T. S.; ŞONTEA, V. P.; RAILEAN, S. K. (ELSEVIER, 2004)

Anodic oxidation under ultraviolet (UV) illumination and rapid photothermal processing technique used for high quality oxide preparation in terms of device surface passivation and gate or tunnel dielectrics are reported.
Shallow p-n junctions formed in silicon using pulsed photon annealing

ŞIŞIANU, S. T.; ŞIŞIANU, T. S.; RAILEAN, S. K. (Springer Nature Switzerland, 2002)

Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties ...

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