Browsing Articole by Author "OPREA, I."

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  • COJOCARI, O.; HOEFLE, M.; MORO-MELGAR, D.; OPREA, I.; RICKES, M. (IEEE, 2019)
    This contribution summarizes recent achievements of European MM- and SubMM-Wave receiver technology using Schottky diodes and THz-MICs fabricated by so-called Film-Diode (FD) process. The FD-process has particularly been ...
  • OPREA, I.; COJOCARI, O.; SOBORNYTSKYY, M.; HARTNAGEL, H. L. (IEEE, 2013)
    This paper presents a method for estimation of junction temperature of a Schottky diode used in a recently developed frequency doubler to 332 GHz. Our particular interest was the validation of the thermal model of the diode ...
  • MORO-MELGAR, D.; COJOCARI, O.; OPREA, I. (IEEE, 2018)
    A 300 GHz source based on discrete Schottky diodes technology is reported in this work. The high frequency part developed by ACST consists of two high power and high efficiency doublers, one at 135-160 GHz and a second one ...
  • COJOCARI, O.; MORO-MELGAR, D.; OPREA, I. (IEEE, 2019)
    A novel approach has been developed on monolithic integration of Schottky diodes with CVD diamond substrate for improved thermal dissipation. This allowed development of mmwave frequency multipliers with unmatched ...
  • HOEFLE, M.; HAEHNSEN, K.; OPREA, I.; COJOCARI, O.; PENIRSCHKE, A.; JAKOBY, R. (IEEE, 2013)
    A compact highly responsive planar zero-bias Schottky detector is proposed for uni-planar and low-cost fabrication. Various zero-bias Schottky diodes are investigated, in particular the optimization of impedance matching ...
  • COJOCARI, O.; OPREA, I.; SYDLO, C.; ZIMMERMANN, R.; WALBER, A.; HENNEBERGER, R.; HARTNAGEL, H.-L. (IEEE, 2005)
    Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer ...

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