Browsing Articole by Author "ICHIZLI, V. M."

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  • TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • ANEDDA, A.; SERPI, A.; KARAVANSKII, V. A.; TIGINYANU, I. M.; ICHIZLI, V. M. (American Institute of Physics, 1995)
    Porous GaP layers prepared by electrochemical anodization of (100)-oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...

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