Browsing Articole ştiinţifice by Title

Sort by: Order: Results:

  • Hierarchical Aerographite 3D flexible networks hybridized by InP micro/nanostructures for strain sensor applications 
    PLESCO, Irina; STROBEL, Julian; SCHÜTT, Fabian; HIMCINSCHI, Cameliu; BEN SEDRINE, Nabiha; MONTEIRO, Teresa; CORREIA, Maria Rosário; GORCEAC, Leonid; CINIC, Boris; URSAKI, Veaceslav; MARX, Janik; FIEDLER, Bodo; MISHRA, Yogendra Kumar; KIENLE, Lorenz; ADELUNG, Rainer; TIGINYANU, Ion (Springer Nature Limited, 2018)
    In the present work, we report on development of three-dimensional flexible architectures consisting of an extremely porous three-dimensional Aerographite (AG) backbone decorated by InP micro/nanocrystallites grown by a ...
  • High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications 
    LUPAN, Oleg; PAUPORTÉ, Thierry; LE BAHERS, Tangui; CIOFINI, Ilaria; VIANA, Bruno (American Chemical Society, 2011)
    We present a combined experimental and computational approach to study Zn1–xCdxO nanowires (NWs) and their integration in light-emitting diode (LED) structures. Self-standing Zn1–xCdxO NWs have been electrodeposited on ...
  • High Education in Biomedical Engineering in Republic of Moldova 
    SONTEA, V.; RAILEAN, S.; VOVC, V.; COSTIN, H.; ZAHARIA, D.; IAVORSCHI, A. (Springer International Publishing, 2015)
    The ubiquitous aspiration to health and life propels healthcare industry as the world's biggest industrial sector. Biomedical engineering (BME) occupies a central place in healthcare industry and it is one of the few areas ...
  • High level of synthesis parallel problem-oriented TS - coordinated digital computing systems 
    KONDRATIEV, V.; BAZHANOV, Y.; BALABANOV, A. (Institute of Mathematics and Computer Science, 1998)
    The development of parallel digital computing systems (DCS) is a main direction in development of architecture of the computers wich succeets the on change of traditional principles of machines designing of consecutive ...
  • High power 150 GHz Schottky based varactor doubler 
    MONTERO-DE-PAZ, J.; SOBORNYTSKYY, M.; HOEFLE, M.; COJOCARI, O. (IEEE, 2016)
    Presented is the design, simulation and characterization of a high power 150 GHz Schottky based varactor doubler. The designed doubler works in the 67.5 GHz-82 GHz input frequency band with an input power of 25 dBm (315 ...
  • High Power Discrete Schottky Diodes Based 275-305 GHz Transceiver for FMCW-Rada 
    MORO-MELGAR, D.; COJOCARI, O.; OPREA, I.; HOEFLE, H.; RICKES, M. (IEEE, 2018)
    A heterodyne 275-305 GHz transceiver intended for frequency modulated continuous wave radar applications is presented here. A commercial E-band active multiplication chain is used to provide the required power and frequency ...
  • High Power High Efficiency 270-320 GHz Source Based on Discrete Schottky Diodes 
    MORO-MELGAR, D.; COJOCARI, O.; OPREA, I. (IEEE, 2018)
    A 300 GHz source based on discrete Schottky diodes technology is reported in this work. The high frequency part developed by ACST consists of two high power and high efficiency doublers, one at 135-160 GHz and a second one ...
  • High sensitive tellurium based NO2 gas sensor 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D. (Elsevier, 2001)
    For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The ...
  • High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure 
    BUDIANU, E.; PURICA, M.; RUSU, E.; NAN, S. (IEEE, 1997)
    The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity ...
  • High Thermoelectric Properties in Quasi-One-Dimensional Organic Crystals 
    SANDULEAC, Ionel; CASIAN, Anatolie (Springer Nature Switzerland, 2021)
    We present a short review about TE properties of organic materials and especially of quasi-one-dimensional (Q1D) organic crystals of p-type tetrathiotetracene-iodide, TTT2I3, and of n-type tetrathiotetracene-tetracyanoqu ...
  • The high-field galvanomagnetic effects in bicrystals of 3D topological insulator Bi 1-x - Sbx (0. 07 ≤ x ≤ 0.15) 
    MUNTYANU, F. M.; GILEWSKI, A.; ROGACKI, K.; CHISTOL, V. (Academia de Ştiinţe a Moldovei, 2014)
    We report the results of the investigations at He-liquid temperatures of the galvanomagnetic effects of twisting bicrystals of 3D topological insulator (TI) Bi1−xSbx (0.07 < x <0.15) to elucidate the peculiarities of ...
  • High-field peculiarities of galvanomagnetic quantum oscillations in Bi bicrystals with nano-width superconducting crystallite interfaces 
    MUNTYANU, F. M.; GILEWSKI, A.; NENKOV, K.; ZALESKI, A. J.; PALEWSKI, T.; CHISTOL, V. (Elsevier, 2013)
    We present the result of high-field (up to 40T) galvanomagnetic study of bismuth bicrystals with nano-width crystallite interfaces (100nm). At B>2T directed along the interface plane in the quantum oscillations spectrum ...
  • High-fields longitudinal hall effect in bi bicrystals with nano-width superconducting crystallite interfaces 
    MUNTYANU, F. M.; GILEWSKI, A.; NENKOV, K.; ZALESKI, A. J.; PALEWSKI, T.; CHISTOL, V. (Institutul de Fizică Aplicată, 2012)
    The results indicate that in bicrystals there are spin-oriented carriers which are located in spectrum of Landau levels at particular orientation of the magnetic field.
  • High-frequency nonlinear characteristics of resonant-tunnelling diodes 
    FEIGINOV, Michael; SYDLO, Cezary; COJOCARI, Oleg; MEISSNER, Peter (American Institute of Physics, 2011)
    The nonlinear response of resonant-tunnelling diodes (RTDs) is analysed theoretically at high frequencies (HFs), which are far above the diode’s tunnel-relaxation-time limit. We show that the HF I-V curve in this regime ...
  • High-Performance Gas Sensors Using Heterostructures based on Binary and Ternary Metal Oxides 
    ABABII, Nicolai; BODDULURI, Mani Teja; KRÜGER, Helge; HANSEN, Sandra; POSTICA, Vasile; LUPAN, Oleg; ADELUNG, Rainer (IEEE, 2021)
    The gas sensing properties of heterojunctions based on binary and ternary metal oxides (CuAl 2 O 4 /Al 2 O 3 /CuO/Cu 2 O, ZnAl 2 O 4 /ZnO and Zn 2 SnO 4 ) were investigated in detail and demonstrated excellent sensitivity ...
  • High-Power MM-Wave Frequency Multipliers 
    COJOCARI, O.; MORO-MELGAR, D.; OPREA, I. (IEEE, 2019)
    A novel approach has been developed on monolithic integration of Schottky diodes with CVD diamond substrate for improved thermal dissipation. This allowed development of mmwave frequency multipliers with unmatched ...
  • High-Power MM-Wave Sources based on Schottky Diodes 
    COJOCARI, Oleg; MORO-MELGAR, Diego; OPREA, Ion; HOEFLE, Matthias; RICKES, Martin (IEEE, 2018)
    A novel approach has been developed at ACST for realization of high-power frequency multipliers in MM/SubMM-Wave range. This approach is based on discrete Schottky structures with monolithically-integrated diamond heatspreader. ...
  • High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels 
    RUIZ-FUERTES, J.; ERRANDONEA, D.; MANJÓN, F. J.; MARTÍNEZ-GARCÍA, D.; SEGURA, A.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the ...
  • High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...

Search DSpace


Browse

My Account